Question

In the second-most common design for photovoltaic thin films, copper indium gallium selenide lies below a window layer of this element’s sulfide. For 10 points each:
[10m] Name this element that is [emphasize] directly bonded to tellurium in the most common photovoltaic thin film.
ANSWER: cadmium [or Cd]
[10e] The cadmium sulfide layer in a CIGS (“sigs”) solar cell lies underneath a conducting film of tin oxide that has this optical property. Indium tin oxide is used in electronics because it has this property of transmitting nearly all light.
ANSWER: transparent [or transparency; accept transparent conducting oxides]
[10h] The third-most common photovoltaic thin film absorber is amorphous silicon that has undergone this process to remove dangling bonds. Chemical formulas represent silicon that has undergone this process as: “Si,” then a colon, then a capital letter.
ANSWER: hydrogenation [or hydrogen incorporation or hydrogen impregnation; or alloying with hydrogen; accept any descriptions of the addition of hydrogen or H; accept hydrogenated amorphous silicon; prompt on reduction or word forms of reduce; prompt on passivation or word forms of passive or passivate]

Back to bonuses

Data

TeamOpponentPart 1Part 2Part 3Total
Brown AGeorgia Tech B010010
Chicago AVanderbilt A010010
Chicago BCornell A010010
Chicago CGeorgia Tech A10101030
Claremont AMinnesota B0000
Columbia AYale A010010
Columbia BToronto A0101020
Cornell BNorthwestern A1010020
Duke AIllinois A010010
Houston AHarvard A0000
Iowa State AUC Berkeley A010010
Maryland APenn A010010
McGill ARutgers B0000
Michigan AFlorida B001010
North Carolina AVirginia A1010020
Ohio State AWUSTL B010010
Penn State AMIT A010010
Rutgers AMinnesota A0000
Stanford ANYU A0000
UC Berkeley BTexas A010010
WUSTL APurdue A1010020
Yale BIndiana A1010020